SUPERCONDUCTING JUNCTIONS USING A 2DEG IN A STRAINED INAS QUANTUM-WELL INSERTED INTO AN INALAS INGAAS MD STRUCTURE/

A newly fabricated three-terminal Josephson junction is coupled with a two-dimensional electron gas (2DEG) in a strained InAs quantum well i nserted into an InAlAs/InGaAs modulation-doped structure. The 2DEG is confined in the InAs quantum well and has a maximum mobility of 155,00 0 cm(2)/Vs at a sheet-carrier density of 1.86 x 10(12) cm(-2) at 10 K. The supercurrent flows through the 2DEG and can be controlled by adju sting the gate voltage. The critical current and normal resistance are measured as a function of the gate voltage, and the sheet-carrier den sity dependence of the critical current is obtained. We also measure t he temperature dependence of the critical current at different gate vo ltages. The results indicate that, when using this junction, the super conducting characteristics can range between the clean and dirty limit s.