ELECTRON-BEAM DAMAGED HIGH-T-C JUNCTIONS - STABILITY, REPRODUCIBILITYAND SCALING LAWS

Citation
Aj. Pauza et al., ELECTRON-BEAM DAMAGED HIGH-T-C JUNCTIONS - STABILITY, REPRODUCIBILITYAND SCALING LAWS, IEEE transactions on applied superconductivity, 5(2), 1995, pp. 3410-3413
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
10518223
Volume
5
Issue
2
Year of publication
1995
Part
3
Pages
3410 - 3413
Database
ISI
SICI code
1051-8223(1995)5:2<3410:EDHJ-S>2.0.ZU;2-E
Abstract
The problems of stability and reproducibility of the electron beam irr adiated high-T-c junctions have been studied. It is found that with a suitable overdamage - anneal protocol that stable junctions can be obt ained. While on chip uniformity can be very good (1%), the chip to chi p reproducibility is not better than 20%. The annealing process allows us to vary T-c of the junctions over a wide range, making it possible to study the scaling behaviour of a single junction. We find that in these junctions I(c)R(n) proportional to J(c)(n), with n=0.75-0.8 or, since the quasiparticle and Cooper-pair cross sections appear to be eq uivalent, I(c)R(n) proportional to sigma(N)(p) where p = 3.0-3.7.