HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON

Authors
CEROFOLINI GF BALBONI R BISERO D CORNI F FRABBONI S OTTAVIANI G TONINI R BRUSA RS ZECCA A CESCHINI M GIEBEL G PAVESI L
Citation
Gf. Cerofolini et al., HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON, Physica status solidi. a, Applied research, 150(2), 1995, pp. 539-586
Citations number
128
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physica status solidi. a, Applied research → ACNP
ISSN journal
00318965
Volume
150
Issue
2
Year of publication
1995
Pages
539 - 586
Database
ISI
SICI code
0031-8965(1995)150:2<539:HPIHOS>2.0.ZU;2-H