A STREAMLINE-UPWINDING PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR-DEVICE MODEL

Authors
JIANG XL
Citation
Xl. Jiang, A STREAMLINE-UPWINDING PETROV-GALERKIN METHOD FOR THE HYDRODYNAMIC SEMICONDUCTOR-DEVICE MODEL, Mathematical models and methods in applied sciences, 5(5), 1995, pp. 659-681
Citations number
20
Categorie Soggetti
Mathematical Method, Physical Science",Mathematics
Journal title
Mathematical models and methods in applied sciences → ACNP
ISSN journal
02182025
Volume
5
Issue
5
Year of publication
1995
Pages
659 - 681
Database
ISI
SICI code
0218-2025(1995)5:5<659:ASPMFT>2.0.ZU;2-Y
Abstract
It is well known that the hydrodynamic model of the semiconductor devi ce equations may have solutions with discontinuities or shocks. To sol ve such problems numerically, a nonsymmetric streamline-upwinding/Petr ov-Galerkin finite element approach is presented for the simulation of the two-dimensional, time-dependent hydrodynamic model. For the silic on diode, numerical experiments are carried out for both subsonic and transonic electron flows. Shocks of the transonic flow are captured.