CHARACTERIZATION OF STRAIN IN AN ADVANCED SEMICONDUCTOR-LASER STRUCTURE WITH NANOMETER RANGE RESOLUTION USING A NEW ALGORITHM FOR ELECTRON-DIFFRACTION CONTRAST IMAGING INTERPRETATION

Authors
JANSSENS KGF VANDERBIEST O VANHELLEMONT J MAES HE HULL R
Citation
Kgf. Janssens et al., CHARACTERIZATION OF STRAIN IN AN ADVANCED SEMICONDUCTOR-LASER STRUCTURE WITH NANOMETER RANGE RESOLUTION USING A NEW ALGORITHM FOR ELECTRON-DIFFRACTION CONTRAST IMAGING INTERPRETATION, Applied physics letters, 67(11), 1995, pp. 1530-1532
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
11
Year of publication
1995
Pages
1530 - 1532
Database
ISI
SICI code
0003-6951(1995)67:11<1530:COSIAA>2.0.ZU;2-3
Abstract
In the present letter electron diffraction contrast imaging (EDCI) com putations for strain characterization on the nanometer scale are prese nted. Using newly developed simulation software for EDCI image interpr etation it is demonstrated how the technique can be used in the charac terization, with submicron resolution, of localized strain fields in a ny crystalline material. Strain fields of arbitrary geometrical symmet ry can be treated. As a case study, localized strain in an advanced se miconductor laser structure is investigated. (C) 1995 American Institu te of Physics.