X-RAY PHOTOELECTRON DIFFRACTION OF (100)-ORIENTED CHEMICAL-VAPOR-DEPOSITED DIAMOND FILMS ON SILICON (100)

(100)-oriented diamond films have been grown on silicon (100) in a mic rowave plasma assisted chemical vapor deposition (CVD) tubular system. X-ray photoelectron diffraction (XPD) has been used to study such ori ented polycrystalline films. Comparing the diffractograms of a natural diamond (100) surface and of polycrystalline (100)-oriented CVD diamo nd films quite similar features are observed. XPD measurements after 8 min of bias treatment show that the tiny crystals are already prefere ntially oriented at deposition parameters required for (100)-oriented film growth. Our measurements indicate a strong need to control the gr owth parameters very carefully during the first minutes of growth to g et an orientation. (C) 1995 American Institute of Physics.