ONE-DIMENSIONAL EXCITON DIFFUSION IN GAAS QUANTUM WIRES

One-dimensional diffusion of excitons in GaAs quantum wires was observ ed by using microphotoluminescence measurements at low temperature. Th e observed diffusion length increased with decreasing wire width from 30 to 15 nm, and decreased from 15 to 7 nm, where maximum diffusion le ngth was about 4 mu m for the 15 nm quantum wire, which is the largest value so far reported. It is considered that the change of diffusion length versus wire width is caused by the competition between one-dime nsional character and the interface fluctuation. (C) 1995 American Ins titute of Physics.