PHOTOLUMINESCENCE OF ORDERED GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

Optical properties of ordered Ga0.5In0.5P epitaxial layers grown by me talorganic vapor phase epitaxy are investigated by photoluminescence ( PL) in a temperature range of 10-200 K using excitation power densitie s between 0.35 W/cm(2) and 20 W/cm(2). It is found that the intensity of the highest-energy PL peak of the ordered Ga0.5In0.5P epilayer decr eases first, then increases and finally goes down again with increasin g temperature. A model of ordered Ga0.5In0.5P epitaxial layers is prop osed, in which the ordered Ga0.5In0.5P epilayer is regarded as a type- II quantum well structure with band-tail states, and the dependence of PL spectra on the temperature and excitation intensity is reasonably explained. (C) 1995 American Institute of Physics.