IN-PLANE-GATE TRANSISTORS FABRICATED FROM SI SIGE HETEROSTRUCTURES BYFOCUSED ION-BEAM IMPLANTATION/

One-dimensional in-plane-gate (IPG) transistors in the Si/Ge system ar e fabricated and characterized by focused ion implantation of Ga+ ions on lines into high-mobility two-dimensional electron gases confined i n Si/SiGe heterostructures. Transistor operation is demonstrated up to temperatures of T=77 K. The depletion length of the FIB written lines and the saturation drift velocity of the electrons in the Si layer un der tensile strain can be estimated from series of samples with differ ent geometric widths of the channel. The IPG transistors presented her e are the first based on Si, pushing this elegant transistor concept t owards the important Si technology. (C) 1995 American Institute of Phy sics.