POLYCRYSTALLINE GAINAS ALINAS FILMS FOR PHOTOCONDUCTIVE DETECTORS/

Citation
Cec. Wood et al., POLYCRYSTALLINE GAINAS ALINAS FILMS FOR PHOTOCONDUCTIVE DETECTORS/, Applied physics letters, 67(11), 1995, pp. 1588-1590
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
67
Issue
11
Year of publication
1995
Pages
1588 - 1590
Database
ISI
SICI code
0003-6951(1995)67:11<1588:PGAFFP>2.0.ZU;2-5
Abstract
We show that thin Al0.48In0.52As layers in Ga0.47In0.53As alloy films, can be used to trap free carriers, and produce high resistivity mater ials suitable for 1.55 mu m photoconductive detectors. (C) 1995 Americ an Institute of Physics.