A SINGLE-ELECTRON DEVICE AND CIRCUIT SIMULATOR

We introduce a single-electron device and circuit simulator, called SI MON, with the following features. Tunnel junctions, capacitors, consta nt voltage sources, piecewise-linear time-dependent voltage sources an d voltage controlled voltage sources can be connected arbitrarily to f orm a single-electron device or circuit. With various parameters one c ontrols transient and stationary simulation modes. All node voltages, node charges and currents in any branch of the network can be output t o files for later post-processing. The tunnelling of single electrons is simulated with a Monte Carlo technique where the change in free ene rgy of the whole network determines tunnel rates of possible tunnel ev ents. (C) 1997 Academic Press Limited