MEDIUM-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDY OF PSEUDOMORPHIC FE SILICIDES GROWN ON SI(111) EVIDENCE OF FE VACANCY FORMATION
S. Hong et al., MEDIUM-ENERGY ELECTRON-DIFFRACTION AND X-RAY PHOTOELECTRON DIFFRACTION STUDY OF PSEUDOMORPHIC FE SILICIDES GROWN ON SI(111) EVIDENCE OF FE VACANCY FORMATION, Applied surface science, 90(1), 1995, pp. 65-74
Citations number
30
Categorie Soggetti
Physics, Condensed Matter","Chemistry Physical","Materials Science, Coatings & Films
The structural evolution of metastable Fe silicide layers versus compo
sition has been investigated by means of inelastic medium energy elect
ron diffraction and photoelectron diffraction. These silicides grown o
n Si(111) by Fe and Si co-deposition onto room temperature Si(111) sub
strate are found to be epitaxial over a wide composition range from Fe
Si to FeSi2. Fe2p(3/2) and Si2p polar scans measured along high symmet
ry [1 (2) over bar 1] and [(1) over bar 2 (1) over bar] directions of
the substrate as well as inelastic medium energy electron diffraction
show that Fe and Si atoms are located in a very similar cubic lattice.
Experimental data clearly show the lattice parameter decrease versus
Fe content decrease from FeSi to FeSi2. Single scattering calculations
have been performed for FeSix silicides with CsCl-type structure. Exp
erimental profiles of FeSix (1 < x < 2) are very well reproduced in th
e calculations by assuming a CsCl-type FeSix structure in which random
ly distributed Fe vacancies are progressively formed when the composit
ion evolves from FeSi to FeSi2.