EXTREMELY FLAT INTERFACES IN IN0.04GA0.96AS AL0.3GA0.7AS QUANTUM-WELLS GROWN ON (411)A IN0.04GA0.96AS SUBSTRATES BY MBE/

Authors
HIYAMIZU S SAEKI T MOTOKAWA T SHIMOMURA S KITADA T ADACHI A OKAMOTO Y KUSUNOKI T NAKAJIMA K SANO N
Citation
S. Hiyamizu et al., EXTREMELY FLAT INTERFACES IN IN0.04GA0.96AS AL0.3GA0.7AS QUANTUM-WELLS GROWN ON (411)A IN0.04GA0.96AS SUBSTRATES BY MBE/, Superlattices and microstructures, 21(1), 1997, pp. 107-111
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Superlattices and microstructures → ACNP
ISSN journal
07496036
Volume
21
Issue
1
Year of publication
1997
Pages
107 - 111
Database
ISI
SICI code
0749-6036(1997)21:1<107:EFIIIA>2.0.ZU;2-N
Abstract
Pseudomorphic In0.04Ga0.96As/Al(0.3)G(0.7)As quantum wells (QWs) with well widths of 1.2, 2.4, 3.6, 4.8, 7.2 and 12 nm have been grown on (4 11)A In0.04Ga0.96As ternary substrates by MBE at growth temperature of T-s = 520 degrees C. The interface flatness of the QWs was characteri zed by photoluminescence at 4.2 K. Extremely flat interfaces have been realized in the QWs on the (411)A InGaAs substrates, which is better or sometimes much better than In0.04Ga0.96As/Al0.3Ga0.7As QWs grown on (100) In0.04Ga0.96As alloy substrates, (411)A and (100) GaAs substrat es, indicating high application potential of (411)A InGaAs alloy subst rates. (C) 1997 Academic Press Limited