ASYMMETRIES OF SPIN-FLIP ELECTRONIC RAMAN-SCATTERING IN A III-V SEMICONDUCTOR QUANTUM-WELL

Citation
Ag. Malshukov et al., ASYMMETRIES OF SPIN-FLIP ELECTRONIC RAMAN-SCATTERING IN A III-V SEMICONDUCTOR QUANTUM-WELL, Physical review. B, Condensed matter, 55(4), 1997, pp. 1918-1921
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
4
Year of publication
1997
Pages
1918 - 1921
Database
ISI
SICI code
0163-1829(1997)55:4<1918:AOSERI>2.0.ZU;2-N
Abstract
We have calculated the angular and the polarization dependence of spin -flip electronic Raman scattering from a III-V semiconductor quantum w ell with its conduction band spin split due to broken inversion symmet ry. We found that the interference of light scattered from the longitu dinal and transverse spin-density fluctuations leads to a dependence o f the Raman spectrum on the direction of circular polarization of phot ons. This phenomenon at zero magnetic field is entirely due to the int rinsic electron spin dynamics in the spin-split band. The predicted as ymmetric polarization dependence is preserved when the sample becomes dirty, such that the elastic-electron scattering rate exceeds the char acteristic frequency of electron spin precession in the spin-split ban d.