BAND DISCONTINUITIES IN INXGA1-XAS-INP AND INP-ALYIN1-YAS HETEROSTRUCTURES - EVIDENCE OF NONCOMMUTATIVITY

Authors
SEIDEL W KREBS O VOISIN P HARMAND JC ARISTONE F PALMIER JF
Citation
W. Seidel et al., BAND DISCONTINUITIES IN INXGA1-XAS-INP AND INP-ALYIN1-YAS HETEROSTRUCTURES - EVIDENCE OF NONCOMMUTATIVITY, Physical review. B, Condensed matter, 55(4), 1997, pp. 2274-2279
Citations number
29
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
4
Year of publication
1997
Pages
2274 - 2279
Database
ISI
SICI code
0163-1829(1997)55:4<2274:BDIIAI>2.0.ZU;2-N
Abstract
We report on conduction-band offset measurements in InP-In0.53Ga0.47As and InP-Al0.48In0.52As heterostructures using internal photoemission. temperature-dependent current-voltage experiments, and photoluminesce nce excitation spectroscopy. The direct and inverse interfaces have be en investigated separately. We find noncommutativity of 88+/-10 meV fo r InP-In0.53Ga0.47As and 53+/-10 meV for InP-Al0.48In0.52As. We also f ind a significant nontransitivity for the average offsets in the InP-A lyIn1-yAs-InxGa1-xAs family. These experimental results are in close a greement with recent theoretical predictions.