LINEAR-RESPONSE THEORY FOR MULTICOMPONENT FERMION SYSTEMS AND ITS APPLICATION TO TRANSRESISTANCE IN 2-LAYER SEMICONDUCTOR STRUCTURES

A dynamic linear-response theory for two-dimensional multicomponent fe rmion systems is developed, The obtained finite-temperature density-de nsity response function incorporates short-range carrier-carrier Coulo mbic correlations, describes optical properties and, unlike earlier ap proaches, is capable of dealing with the dynamic and de transport. Thi s theory allows us to derive the dynamic electric conductivities for d ouble-layer systems accounting for the carrier-carrier Coulomb and dis order scattering. The expression for the de transresistance, extracted from these conductivities, fully accounts for both intralayer and int erlayer correlations included as a result of a microscopic derivation. When the effects of correlations are ignored we recover the expressio n for the transresistance derived earlier in mean-field theories. The microscopic theory predicts a rigorous relation between the transresis tance and the resistivities of individual layers. It follows from this relation that the individual layer resistivities do not vanish even i n the limit of disappearing disorder scattering. Unlike in electron-ho le structures. the interlayer correlations in electron-electron system s tend to diminish the transresistance. The numerical analysis shows, however, that the net effect of correlations is to enhance the transre sistance by nearly an order of magnitude in available electron-electro n double layers, the effect already observed in electron-hole structur es.