INTERFACE DEFECTS AND THEIR ROLES IN LIGHT-INDUCED PHENOMENA IN N-SI-H A-SI1-XNX-H MULTILAYERS/

The interface defects in the n-Si:H/a-Si1-xNx:H multilayer have been e xamined from photoluminescence (PL) and optically detected magnetic re sonance (ODMR) measurements, particularly for a-Si:H/a-Si0.6N0.4:H mul tilayers fabricated by varying the interrupting interval of alternatin g two gases, i,e., SiH4 diluted to 10% in H-2 and a mixture gas of SiH 4 (10% in H-2) and pure NH3. The results of the PL and ODMR measuremen ts are discussed in terms of three kinds of interface defects, i.e., s ilicon dangling bonds, T-3(0), separate T-3(+)-N-2(-) pair defects (E centers), and close T-3(+)-N-2(-) pair defects (E centers), where T-3 (+) and N-2(-) designate the positively charged threefold-coordinated silicon atom and negatively charged twofold-coordinated nitrogen atom, respectively. The light-induced effect on PL and ODMR was also discus sed in terms of creation of the interface defects by prolonged illumin ation. These investigations allow us to elucidate the nature of the in terface defects in those multilayers.