MOLECULAR-DYNAMICS SIMULATION OF THIN-FILM AMORPHOUS-CARBON GROWTH

Molecular dynamics simulations of amorphous diamond thin film growth w ere carried out using a Stillinger-Weber potential parameterised to de scribe both sp(2) and sp(3) carbon bonding. The effects of the inciden t beam energy and angle and substrate temperature were investigated. I t was found that in very thin films, not deep enough to allow the gene ration of compressive stress, atomic impacts lead to the formation of a graphitic surface layer. Results also indicate that the optimal cond itions for the formation of tetrahedral sp(3) structures involve low i ncident beam energy and low substrate temperatures.