K. Hayasaki et al., SCANNING-TUNNELING-MICROSCOPY OF EPITAXIAL YBA2CU3O7-X FILMS PREPAREDBY THERMAL PLASMA FLASH EVAPORATION METHOD, Journal of applied physics, 81(3), 1997, pp. 1222-1226
The surface morphology of epitaxial YBa2Cu3O7-x films prepared by ther
mal plasma flash evaporation was extensively investigated by scanning
tunneling microscopy. Under epitaxial film growth conditions with the
deposition rate up to 0.42 mu m/min, two-dimensional nucleus growth an
d spiral growth were observed. The main deposition species in this pro
cess was found to be the cluster ranging from 0.3 to 9 nm and the size
of the cluster influenced the growth mode strongly. Theoretical analy
sis based on the two-dimensional critical radius revealed that smaller
clusters became weakly bended nuclei resulting in spiral growth and l
arger clusters became stable nuclei resulting in two-dimensional nucle
us growth, which we named two-dimensional cluster nucleus growth. The
clusters generated in the plasma boundary layer undoubtedly involve su
fficient energy necessary for crystallization and show quite different
characteristics from those of the clusters generated in vacuum by adi
abatic expansion process. Hence, this process must be named ''hot clus
ter epitaxy.'' (C) 1997 American Institute of Physics.