EXCHANGE INTERACTION EFFECT ON THE DARK CURRENT IN N-TYPE ALXGA1-XAS GAAS MULTIPLE-QUANTUM WELLS INFRARED DETECTORS/

Citation
Dh. Huang et Mo. Manasreh, EXCHANGE INTERACTION EFFECT ON THE DARK CURRENT IN N-TYPE ALXGA1-XAS GAAS MULTIPLE-QUANTUM WELLS INFRARED DETECTORS/, Journal of applied physics, 81(3), 1997, pp. 1305-1310
Citations number
25
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
81
Issue
3
Year of publication
1997
Pages
1305 - 1310
Database
ISI
SICI code
0021-8979(1997)81:3<1305:EIEOTD>2.0.ZU;2-L
Abstract
A many-body model based on the self-consistent screened Hartree-Fock a pproximation is, used to study the electron-electron exchange interact ion effect on the dark current in n-type AlxGa1-xAs/GaAs multiple quan tum wells infrared detectors. This is accomplished by taking the diffe rence between the dark current calculated from the single-particle mod el and that obtained from the many-body model. This difference is foun d to be independent of the electron mobility and the saturation veloci ty. The difference in the dark current was studied as a function of th e bias voltage, doping concentration, and temperature. The results pre dict that the dark current obtained from the single-particle model is overestimated as much as an order of magnitude at low temperatures and high doping concentrations. (C) 1997 American Institute of Physics.