Dh. Huang et Mo. Manasreh, EXCHANGE INTERACTION EFFECT ON THE DARK CURRENT IN N-TYPE ALXGA1-XAS GAAS MULTIPLE-QUANTUM WELLS INFRARED DETECTORS/, Journal of applied physics, 81(3), 1997, pp. 1305-1310
A many-body model based on the self-consistent screened Hartree-Fock a
pproximation is, used to study the electron-electron exchange interact
ion effect on the dark current in n-type AlxGa1-xAs/GaAs multiple quan
tum wells infrared detectors. This is accomplished by taking the diffe
rence between the dark current calculated from the single-particle mod
el and that obtained from the many-body model. This difference is foun
d to be independent of the electron mobility and the saturation veloci
ty. The difference in the dark current was studied as a function of th
e bias voltage, doping concentration, and temperature. The results pre
dict that the dark current obtained from the single-particle model is
overestimated as much as an order of magnitude at low temperatures and
high doping concentrations. (C) 1997 American Institute of Physics.