DIRECT-BAND-GAP ENERGY OF SEMICONDUCTORS

Empirical formulae are obtained relating the direct band-gap energy of semiconductors and the mean atomic number of the constituent atoms. T he formulae are used to indicate doubtful values and to obtain the val ues of bowing parameters of energy band-gaps of ternaries and quaterna ries. Derived values of the bowing parameter give band-gap energies of ternaries and quaternaries agreeing with experiments to within 0.3-7. 3% for all III-V compounds except those containing indium antimonide.