IMPROVEMENTS OF DRAIN CURRENT CHARACTERISTICS OF INAS FIELD-EFFECT TRANSISTORS BY THE SURFACE-REACTION OF PLATINUM GATE

We have successfully demonstrated that the deposition and subsequent a lloying of platinum gate would dramatically improve the current-voltag e characteristics of InAs heterojunction FETs based on antimonides. Th e removal of the surface oxide/defects and in situ formation of a clea n Schottky interface by the surface reaction presumably caused the dra matic improvements. The technique may be applicable to other heterojun ction FETs, especially when a high aluminum compound ratio is involved .