We demonstrate experimentally that solid-state lasers with strong soli
tonlike pulse shaping can be mode locked by a slow saturable absorber
only, i.e., the response time is much slower than the width of the sol
iton. A Ti:sapphire laser mode locked by a low-temperature-grown GaAs
absorber with 10-ps recovery time generates pulses as short as 300 fs
without the need for Kerr-lens mode locking and critical cavity alignm
ent. An extrapolation of this result would predict that an approximate
to 100-fs recovery time of a semiconductor absorber could support pul
ses into the 10-fs regime. (C) 1995 Optical Society of America