TERTIARYBUTYLARSINE FOR METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTHOF HIGH-PURITY, HIGH UNIFORMITY FILMS

We have performed an extensive study of GaAs, Al0.22Ga0.78As, and In0. 16Ga0.84As grown using tertiarybutylarsine (TEA) in an ultra-high puri ty metalorganic chemical vapor deposition multi-wafer reactor. Key res ults include: high purity TEA AlGaAs layers with the lowest p-type car rier concentrations (4 x 10(14) cm(-3)) reported to date; 4K photolumi nescence bound exciton Linewidths as narrow as 4.3 meV; C, O. Si, and S concentrations below the secondary ion mass spectrometry detection l imit; and InGaAs/GaAs quantum wells with 20K PL linewidths as narrow a s 3.5 meV. We also observe a strong dependence of growth rates and dop ing efficiency on group-V partial pressure, possibly due to a competit ion between excess group-V species and group-III or Si species for gro up-III surface sites. Finally, we demonstrate record uniformity using TEA with an AlGaAs thickness variation of only +/-1.4% across a 4 inch wafer.