INDIUM-PHOSPHIDE WHISKERS GROWN BY ION-BOMBARDMENT

Authors
Citation
F. Okuyama et J. Kato, INDIUM-PHOSPHIDE WHISKERS GROWN BY ION-BOMBARDMENT, Surface science, 338(1-3), 1995, pp. 857-862
Citations number
14
Categorie Soggetti
Chemistry Physical
Journal title
ISSN journal
00396028
Volume
338
Issue
1-3
Year of publication
1995
Pages
857 - 862
Database
ISI
SICI code
0039-6028(1995)338:1-3<857:IWGBI>2.0.ZU;2-J
Abstract
Ar+-ion bombardment of monocrystalline InP at 3 keV is shown to grow I nP whiskers at 100 degrees C or so. The whiskers are usually topped wi th a hemispherical In crystal, lengthening along the trajectories of i ncoming ions. The orientation of the whiskers is InP [111], independen t of the ion-incidence angle, and thus the InP lattice is constructed under the bombardment by energetic ions. These facts indicate that ion bombardment in a few keV regime is not always destructive but sometim es activates the lattice construction process.