GENERATION OF THE SI(111)-(2X1) SURFACE RECONSTRUCTION BY A RAPID RADIATION QUENCH

Surface morphology of the Si(111) samples quenched with a cooling rate of about 350 degrees C s(-1) was studied by scanning tunnelling micro scopy. In all quench experiments the (7 x 7) reconstruction was the ma in structure observed. No traces of other structures were found by mea ns of low-energy electron diffraction. The formation of triangular res idual islands in the middle of wide terraces was revealed by scanning tunnelling microscopy for initial quench temperatures in the range 115 0-1250 degrees C. Formation of solid structureless residual islands re sulted from a quench from temperatures of about 1300 degrees C. Upon q uenching from even higher temperatures, (2 x 1) structure domains appe ar within solid islands. All island types must be the result of local compression of the adatom gas by the growing (7 x 7) reconstruction sp ots during quench.