A study of the structure of thin Cu coatings on ultrathin SiO2 films g
rown on Si(111) is reported. Cu growth takes place in islands, and aft
er annealing to 625 K or above, the Cu overlayer diffuses into the sub
strate. These results are similar to recently reported results for Ni
overlayers. Unlike Ni, however, the Cu atoms occupy interstitial sites
in the Si lattice.