The influence of monolayer coverages of antimony (Sb) on vicinal silic
on (001) is studied by reflectance anisotropy spectroscopy (RAS). Adso
rption of Sb at room temperature, which is known to break the Si dimer
bond and to cause step reconstruction, changes the shape of the RAS s
pectrum completely, even before annealing. An interesting feature appe
ars in the region of 3.7 eV, which sharpens when the system is anneale
d to 300 degrees C to form the Si(001)-(1 x 1)-Sb structure. Our resul
ts support the view that Si(001)-(1 x 1)-Sb is a distinct phase and we
associate the 3.7 eV peak with optical transitions involving Si-Sb ba
ckbonds. Further annealing to 550 degrees C forms Si(001)-(2 x 1)-Sb,
where the Sb atoms are now dimerised. This heat treatment decreases th
e vicinal surface domain imbalance by splitting up the double-height s
teps, and the RAS signal is reduced in size. Annealing to 750 degrees
C causes Sb desorption and the formation of the 0.25 ML Si(001)-c(4 x
4)-Sb structure, with an increase in optical anisotropy, which we attr
ibute to double-height steps reforming as the Sb dimer-induced strain
in the system is alleviated. Complete desorption of Sb restores the Si
(001)-(1 x 2) structure, and the original RAS signal.