INTRINSIC RADIATIVE LIFETIMES OF INP IN0.48GA0.52P QUANTUM DOTS/

We report on the resonantly ground-state excited, time-resolved photol uminescence of self assembled InP dots embedded in In0.48Ga0.52P grown by molecular beam epitaxy. Measurements dependent on excitation power and temperature show that the resonant luminescence is sensitive neit her to exciton-exciton scattering nor phonon scattering, demonstrating the quantum dot nature of the InP islands. The measured decay times y ield the intrinsic radiative lifetimes of excitons, typically 400 ps a nd one order of magnitude larger than that found in quantum wells.