STUDY OF THE CARRIER DENSITY-DEPENDENCE OF THE FRICTIONAL DRAG BETWEEN CLOSELY SPACED 2-DIMENSIONAL ELECTRON GASES

Citation
H. Rubel et al., STUDY OF THE CARRIER DENSITY-DEPENDENCE OF THE FRICTIONAL DRAG BETWEEN CLOSELY SPACED 2-DIMENSIONAL ELECTRON GASES, Semiconductor science and technology, 10(9), 1995, pp. 1229-1232
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
10
Issue
9
Year of publication
1995
Pages
1229 - 1232
Database
ISI
SICI code
0268-1242(1995)10:9<1229:SOTCDO>2.0.ZU;2-9
Abstract
We have studied electron transport in two closely spaced, but electric ally isolated, two-dimensional electron gases (2DEGs) formed in GaAs/A lGaAs double quantum wells. A frictional drag voltage is found to be i nduced in one layer when a current is passed through the other. This v oltage represents a direct measure of the interlayer electron-electron interactions, since it is determined by the momentum transfer due to scattering events between electrons in the different layers. We presen t new experimental data, based on a detailed carrier density dependenc e of these electron-electron interactions. Our results strongly suppor t a recent theory proposing an interaction via virtual acoustic phonon s. We have shown, in particular, that the 'phonon part' of the interla yer scattering rate is a function of the relative electron densities i n the layers, with a maximum scattering rate when the densities are ma tched.