A COMPARISON OF 1.55 MU-M DISTRIBUTED-BRAGG-REFLECTOR STACKS FOR USE IN MULTIQUANTUM-WELL MICRO-RESONATOR MODULATORS

We have investigated p- and n-doped distributed Bragg reflector stacks (DBRs) in several material systems in order to evaluate their use in multi quantum well (MQW) micro resonator modulators. We have shown tha t over 80% reflectivity can be obtained using 12 periods in a p-type G a-0.35 In0.65As0.75 P-0.25/InP or Al0.08Ga0.39In0.53As/Al0.48In0.52As. Lattice-matched n-doped Ga0.47In0.53As/InP and Ga0.47In0.47In0.53As/A l0.48In0.52As DBRs are shown to give 98% reflectivity with only 20 per iods. We have found that n doping of greater than 1 x 10(18) cm(-3) sh ifts the absorption edge of lattice-matched GalnAs to enable its use i n 1.55 mu m DBRs.