Nr. Aluru et al., NUMERICAL-SOLUTION OF 2-CARRIER HYDRODYNAMIC SEMICONDUCTOR-DEVICE EQUATIONS EMPLOYING A STABILIZED FINITE-ELEMENT METHOD, Computer methods in applied mechanics and engineering, 125(1-4), 1995, pp. 187-220
A space-time Galerkin/least-squares finite element method was presente
d in [1] for numerical simulation of single-carrier hydrodynamic semic
onductor device equations. The single-carrier hydrodynamic device equa
tions were shown to resemble the ideal gas equations and Galerkin/leas
t-squares finite element method, originally developed for computationa
l fluid dynamics equations [16], was extended to solve semiconductor d
evice applications. In this paper, the space-time Galerkin/least-squar
es finite element method is further extended and generalized to solve
two-carrier hydrodynamic device equations. The proposed formulation is
based on a time-discontinuous Galerkin method, in which physical entr
opy variables are employed. A standard Galerkin finite element method
is applied to the Poisson equation. Numerical simulations are performe
d on the coupled Poisson and the two-carrier hydrodynamic equations em
ploying a staggered approach. A mathematical analysis of the time-depe
ndent multi-dimensional hydrodynamic model is performed to determine w
ell-posed boundary conditions for electrical contacts. The number of b
oundary conditions that need to be specified for the hydrodynamic equa
tions at inflow and outflow boundaries of the device are derived. Exam
ple boundary conditions that are based either on physical and/or mathe
matical basis are presented. Stability of the numerical algorithms is
addressed. The space-time Galerkin/least-squares finite element method
and the standard Galerkin finite element method for the hydrodynamic
and Poisson equations, respectively, are shown to be stable. Specifica
lly, a Clausius-Duhem inequality, a basic stability requirement, is de
rived for the hydrodynamic equations and the proposed numerical method
automatically satisfies this stability requirement. Numerical simulat
ions are performed on one- and two-dimensional two-carrier p-n diodes
and the results demonstrate the effectiveness of the proposed numerica
l method.