FORMATION AND STABILITY OF AL-MN QUASI-CRYSTALLINE THIN-FILMS PREPARED BY HIGH-TEMPERATURE SUCCESSIVE DEPOSITION

Citation
A. Csanady et al., FORMATION AND STABILITY OF AL-MN QUASI-CRYSTALLINE THIN-FILMS PREPARED BY HIGH-TEMPERATURE SUCCESSIVE DEPOSITION, Phase transitions, 44(1-3), 1993, pp. 81-97
Citations number
14
Categorie Soggetti
Crystallography,"Physics, Condensed Matter
Journal title
ISSN journal
01411594
Volume
44
Issue
1-3
Year of publication
1993
Pages
81 - 97
Database
ISI
SICI code
0141-1594(1993)44:1-3<81:FASOAQ>2.0.ZU;2-I
Abstract
This article reviews the results on the formation of i-QC thin films p repared by high-temperature successive deposition in the Al-Mn system and the metastable quasicrystalline Al4Mn and crystalline Al6Mn phase transformation in detail. Experimental evidence is given for the locat ion of the solid-phase reaction. New data concerning the effects of pr eparation parameters (temperature, Mn deposition rate, composition) on the formation processes are reported. The phase formation and transfo rmation processes are described by the combination of thermodynamic an d kinetic factors.