INTEGRATED TUNABLE DBR LASER WITH EA-MODULATOR GROWN BY SELECTIVE-AREA MOVPE

A wavelength tunable DBR laser monolithically integrated with an EA-mo dulator as a WDM system light source was fabricated by selective area MOVPE growth. The lasing wavelength and band-gap energy were simultane ously controlled on the same epitaxial wafer by using a modulated grow n thickness of InGaAsP/InGaAsP MQW layers. A wavelength tuning range o f >3.5 nm, an output power of >3 mW, and an extinction ratio of >14 dB for 3 V were achieved. The measured 3 dB frequency bandwidth was 2 GH z. No significant change in modulation characteristics were observed w hen wavelength tuning by injecting the current into the DBR.