We describe the design, fabrication, and characteristics of FDM/WDM co
upler deposited by TEOS-O-3 based APCVD method on silicon substrates.
Due to drastically reduced birefringence by APCVD process, completely
polarization independent narrow band (100 GHz) Mach-Zehnder type FDM c
oupler was obtained. We also fabricated 1.3/1.55 mu m directional coup
ler type WDM coupler with very low insertion loss.