Light-emitting diodes using Langmuir-Blodgett films of quinquethiophen
e as the emitting layer have been fabricated, and electrically and opt
ically characterized. By utilizing additional layers of electron-trans
porting materials, the emitting material thickness has been reduced do
wn to a single monolayer without serious decrease in the quantum effic
iency. These electronic devices are valuable tools for studying carrie
r injection and transport, exciton formation, and quenching on a real
molecular scale.