HETEROEPITAXIAL SUBSURFACE GROWTH MODE RESULTING IN INTERLAYER MIXING

Citation
Pw. Murray et al., HETEROEPITAXIAL SUBSURFACE GROWTH MODE RESULTING IN INTERLAYER MIXING, Physical review. B, Condensed matter, 55(3), 1997, pp. 1380-1383
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
3
Year of publication
1997
Pages
1380 - 1383
Database
ISI
SICI code
0163-1829(1997)55:3<1380:HSGMRI>2.0.ZU;2-P
Abstract
A subsurface growth mode which results in interlayer mixing has been r evealed from an interplay between scanning tunneling microscopy and ab initio total-energy calculations for the growth of Pd on Cu(110) and Ag(110) surfaces. On Cu(110), the Pd initially alloys into the surface layer forming ordered linear -Pd-Cu- chains. As the coverage is incre ased, the -Pd-Cu- chains remain at the same level, but become covered, partly by Cu atoms expelled during alloying, partly by substrate mate rial supplied from steps and terraces. This results in a very rough su rface morphology, even at relatively low Pd coverages. Similar structu res were observed on Ag(110). The observed growth mode is expected to apply to other heteroepitaxial systems as well.