PLASMON-PHONON COUPLING IN DELTA-DOPED POLAR SEMICONDUCTORS

Authors
HAI GQ STUDART N MARQUES GE
Citation
Gq. Hai et al., PLASMON-PHONON COUPLING IN DELTA-DOPED POLAR SEMICONDUCTORS, Physical review. B, Condensed matter, 55(3), 1997, pp. 1554-1562
Citations number
48
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
55
Issue
3
Year of publication
1997
Pages
1554 - 1562
Database
ISI
SICI code
0163-1829(1997)55:3<1554:PCIDPS>2.0.ZU;2-S
Abstract
The collective excitations and their coupling to optical phonons have been studied for a two-dimensional electron gas in delta-doped polar s emiconductors within the random-phase approximation. Our calculation s hows that, due to the high electron density in these systems in which several subbands are occupied, both intrasubband and intersubband plas mon modes are strongly coupled to the optical-phonon modes.