D. Sestovic et al., DYNAMICAL SCREENING IN THE SCANNING TUNNELING MICROSCOPE AND METAL-INSULATOR-METAL JUNCTIONS, Physical review. B, Condensed matter, 55(3), 1997, pp. 1741-1747
We investigate electron tunneling in a system consisting of two curved
metal surfaces separated by insulator or vacuum. In particular, we ca
lculate the modifications of the tunneling barrier due to dynamical sc
reening, i.e., interaction with charge fluctuations: We apply our gene
ral results to the planar metal-insulator-metal (MIM) junction, and to
the scanning tunneling microscope (STM), describing the tip and the s
ample surface in STM by two rotational hyperboloids. We analyze the in
fluence of the shape, dielectric properties, and work functions of bot
h metals on the tunneling characteristics in the MIM and STM systems.
For metals with different plasma frequencies, charge-fluctuation modes
are effectively decoupled, and the electron interaction with these mo
des is significantly different than in the case of like metals, causin
g asymmetry in the barrier and also in the tunneling currents and cond
uctivities. We also show that, for geometrical reasons, the tunneling
barrier in the STM is lowered near the tip apex, which leads to focusi
ng of the tunneling current and increased lateral resolution of STM.