DYNAMICAL SCREENING IN THE SCANNING TUNNELING MICROSCOPE AND METAL-INSULATOR-METAL JUNCTIONS

Citation
D. Sestovic et al., DYNAMICAL SCREENING IN THE SCANNING TUNNELING MICROSCOPE AND METAL-INSULATOR-METAL JUNCTIONS, Physical review. B, Condensed matter, 55(3), 1997, pp. 1741-1747
Citations number
37
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
55
Issue
3
Year of publication
1997
Pages
1741 - 1747
Database
ISI
SICI code
0163-1829(1997)55:3<1741:DSITST>2.0.ZU;2-G
Abstract
We investigate electron tunneling in a system consisting of two curved metal surfaces separated by insulator or vacuum. In particular, we ca lculate the modifications of the tunneling barrier due to dynamical sc reening, i.e., interaction with charge fluctuations: We apply our gene ral results to the planar metal-insulator-metal (MIM) junction, and to the scanning tunneling microscope (STM), describing the tip and the s ample surface in STM by two rotational hyperboloids. We analyze the in fluence of the shape, dielectric properties, and work functions of bot h metals on the tunneling characteristics in the MIM and STM systems. For metals with different plasma frequencies, charge-fluctuation modes are effectively decoupled, and the electron interaction with these mo des is significantly different than in the case of like metals, causin g asymmetry in the barrier and also in the tunneling currents and cond uctivities. We also show that, for geometrical reasons, the tunneling barrier in the STM is lowered near the tip apex, which leads to focusi ng of the tunneling current and increased lateral resolution of STM.