SI-BASED NANOSTRUCTURE WAVE-GUIDES

We investigate the possibility of constructing nanostructure waveguide s using Si-based materials. For this purpose we evaluate the dielectri c function of strain-symmetrized (Si)lo-nl(Ge), strained-layer superla ttices (SLS's) with n=3, 5 and 7, and (Si)(6)/(Ge)(4) SLS coherently g rown on a Si(001) surface, as well as that for bulk Si-1-n/10 Ge-n/10 alloys with n=3, 5 and 7, and bulk Si. In particular we explore the po ssibility of constructing waveguides using the materials (Si)(6)/(Ge)( 4) SLS, coherently grown on a Si(001) surface, and bulk Si. We investi gate the case of planar waveguide structure, giving results concerning the propagation and penetration of the transverse magnetic modes. (C) 1995 American Institute of Physics.