A TECHNOLOGY ORIENTED MODEL FOR TRANSIENT DIFFUSION AND ACTIVATION OFBORON IN SILICON

We propose a model for point-defect-assisted transient diffusion and a ctivation of high-dose boron implants in silicon. To model transient d iffusion, a nonlinear equilibrium clustering model for point defects i s used. The activation of boron is modeled as a Fenni-level-dependent transformation of inactive dopant clusters to substitutional atoms. Co mparison with experimental data shows that this approach can provide a description of both rapid thermal annealing and long-time furnace ann ealing steps, with an excellent predictive capability for both chemica l and electrically active profiles. (C) 1995 American Institute of Phy sics.