ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS

Citation
M. Palczewska et al., ANTISITE DEFECTS CREATED IN NEUTRON-IRRADIATED GAP CRYSTALS, Journal of applied physics, 78(6), 1995, pp. 3680-3685
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
6
Year of publication
1995
Pages
3680 - 3685
Database
ISI
SICI code
0021-8979(1995)78:6<3680:ADCING>2.0.ZU;2-2
Abstract
This article compares the nature of phosphorus antisite defects in as- grown and neutron irradiated GaP crystals. Electron spin resonance stu dies indicate that these defects in both kinds of crystals have identi cal close neighbors consisting of four phosphorus atoms. Neutron irrad iation of GaP introduced an additional defect (called WA1), which is l inked to a gallium antisite. Characteristic absorption bands and condu ctivity of neutron irradiated CaP crystals are discussed as well. (C) 1995 American Institute of Physics.