QUANTUM-WELL INTERMIXING FOR OPTOELECTRONIC INTEGRATION USING HIGH-ENERGY ION-IMPLANTATION

The technique of ion-induced quantum-well (QW) intermixing using broad area, high energy (2-8 MeV As4+) ion implantation has been studied in a graded-index separate confinement heterostructure InGaAs/GaAs QW la ser. This approach offers the prospect of a powerful and relatively si mple fabrication technique for integrating optoelectronic devices. Par ameters controlling the ion-induced QW intermixing, such as ion doses, fluxes, and energies, post-implantation annealing time, and temperatu re are investigated and optimized using optical characterization techn iques such as photoluminescence, photoluminescence excitation, and abs orption spectroscopy. (C) 1995 American Institute of Physics.