AR- ROOM-TEMPERATURE OXIDE FORMATION STUDIED BY X-RAY PHOTOELECTRON-SPECTROSCOPY( BOMBARDMENT OF SI(100) IN OXYGEN ATMOSPHERE )

We report the formation of silicon oxide thin films at room temperatur e obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0 less than or equal to E(b) less than or equal to 400 eV) and characte rized by x-ray photoelectron spectroscopy. The oxidation rate, as well as the SiO2/SiOx (x = 0.5, x = 1, and x = 1.5) ratio, have been found to increase with the ion beam energy. For the highest energy bombardm ent, E(b) = 400 eV, we observed the formation of a uniform, electrical ly insulating, SiO2 top layer about 37 Angstrom thick. (C) 1995 Americ an Institute of Physics.