PROPERTIES OF SILICON-TIN ALLOYS PREPARED BY PULSED-LASER DEPOSITION

Citation
S. Siebentritt et al., PROPERTIES OF SILICON-TIN ALLOYS PREPARED BY PULSED-LASER DEPOSITION, Journal of applied physics, 78(6), 1995, pp. 3915-3919
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
6
Year of publication
1995
Pages
3915 - 3919
Database
ISI
SICI code
0021-8979(1995)78:6<3915:POSAPB>2.0.ZU;2-P
Abstract
Metastable thin-film alloys of tin and silicon have been grown on room temperature substrates by pulsed laser deposition. The composition of the targets, made by pressing pellets of a mixture of tin and silicon powders, was maintained in the deposited films. The granular films co nsisted of tin nano-crystallites surrounded by an amorphous matrix. De posited films with tin concentration greater than 15% showed metallic behavior, optically as well as electrically, while films with tin cont ents less than 15% displayed optical bandgaps ranging from 100 to 300 meV. Charge transport in the semiconducting films can be modeled by a combination of conduction in extended states and hopping at the Fermi level. (C) 1995 American Institute of Physics.