Nanocrystalline Si particles of 10 nm size, doped with traces (1 at. %
) of Sn, are prepared by mechanical attrition in an inert ambient. Aft
er stain-etching, the particles photoluminesce at room Sn-119 Mossbaue
r spectroscopy, Raman scattering, photoluminesce, and Fourier temperat
ure. transform infrared spectroscopy measurements performed as a funct
ion of stain-etching time reveal systematic changes, and suggest that
the molecular structure of porous Si consists of nanocrystalline Si pa
rticles with surfaces passivated by H and/or O atoms. (C) 1995 America
n Institute of Physics.