ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y

Authors
ABID H BADI N DRIZ M BOUARISSA N BENKABOU KH KHELIFA B AOURAG H
Citation
H. Abid et al., ELECTRONIC-STRUCTURE OF THE QUATERNARY ALLOY GAXIN1-XASYP1-Y, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 133-139
Citations number
27
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
33
Issue
2-3
Year of publication
1995
Pages
133 - 139
Database
ISI
SICI code
0921-5107(1995)33:2-3<133:EOTQAG>2.0.ZU;2-D
Abstract
A method for calculating the electronic structure of the quaternary al loy GaxIn1-xAsyP1-y is presented. We have used the empirical pseudopot ential method coupled with the virtual crystal approximation, which in corporates the compositional disorder as an effective potential. The e lectronic structure are studied for GaxIn1-xAsyP1-x(x = 0.5; y = 0.5) and GaxIn1-xAsyP1-y lattice matched to InP as well as GaAs. Good agree ment with experiment is obtained for the calculated values of the dire ct energy gap and the bowing parameter at the Gamma point of the InP-l attice-matched quaternary alloy.