TEM AFM STUDY OF THE GROWTH OF LA2-XSRXCUO4 THIN-FILMS LASER-DEPOSITED ON (100)SRTIO3 SUBSTRATES/

Citation
Mj. Casanove et al., TEM AFM STUDY OF THE GROWTH OF LA2-XSRXCUO4 THIN-FILMS LASER-DEPOSITED ON (100)SRTIO3 SUBSTRATES/, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 162-167
Citations number
17
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
09215107
Volume
33
Issue
2-3
Year of publication
1995
Pages
162 - 167
Database
ISI
SICI code
0921-5107(1995)33:2-3<162:TASOTG>2.0.ZU;2-K
Abstract
The growth characteristics of La2-xSrxCuO4 thin films of various thick nesses (10-150 nm), epitaxially grown by laser ablation on (100) SrTiO 3 substrates, were analysed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). A periodic surface roughness with a n important peak valley amplitude (about 20% of the film thickness) wa s clearly observed in the films thicker than 25 nm. The period of the undulations did not depend on the deposited thickness. In contrast, AF M experiments performed on thinner films showed a perfect smoothness o f the surface and a complete coverage of the substrate. These results were examined in connection with the fabrication of YBCO/LSCO (YBa2Cu3 O7-delta/La2-xSrxCuO4) high T-c superconducting multilayer films.