EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS

Authors
HSIA ST LEE CP HWANG HL
Citation
St. Hsia et al., EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 178-181
Citations number
5
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
33
Issue
2-3
Year of publication
1995
Pages
178 - 181
Database
ISI
SICI code
0921-5107(1995)33:2-3<178:EONMFT>2.0.ZU;2-7
Abstract
A thermally stable, low resistance ohmic contact system Ni-Ln-Ni to n- GaAs was investigated. The lowest value of the specific contact resist ance rho(c) was 1.71 x 10(-4) Omega cm(2). Hearing the contact up to 4 00 degrees C for 5 h did not obviously change the value of rho(c). It was observed by Auger electron spectroscopy and X-ray diffraction that Ni-Ln compounds, Ga-Ni and InAs formed at the metal-GaAs interface. I t was noted that In reacted with GaAs and formed a heterojunction ohmi c contact (such as InAs-InxGa1-xAs-GaAs) and due to the low melting po int (156 degrees C) of In, additions of Ni are needed to completely re act the remaining In to form a high melting point compound.