EFFECT OF SILICON IMPLANTATION AND ANNEALING ON OXYGEN IN Y3AL5O12

Authors
SAKAGUCHI I HISHITA S HANEDA H YANAGITANI T
Citation
I. Sakaguchi et al., EFFECT OF SILICON IMPLANTATION AND ANNEALING ON OXYGEN IN Y3AL5O12, Materials science & engineering. B, Solid-state materials for advanced technology, 33(2-3), 1995, pp. 10-12
Citations number
7
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
33
Issue
2-3
Year of publication
1995
Pages
10 - 12
Database
ISI
SICI code
0921-5107(1995)33:2-3<10:EOSIAA>2.0.ZU;2-X
Abstract
The change of O-18 and Si-28 profiles in Y3Al5O12 were measured by sec ondary ion mass spectrometry. After Si implantation, it was observed t hat the O-18 diffused into bulk either along the grain boundary or in the volume. For annealed samples, the kinetic process at the discontin uity boundary in the Si profile was observed and the enhanced diffusio n of O by radiation damage in the implanted layer was estimated from t he change of the O-18 profile.